Products specifications
Attribute nameAttribute value
Row cycle time45.75 ns
Refresh row cycle time350 ns
Country of OriginTaiwan
Width2.74"
Depth0.146"
Height1.18"
JEDEC standardY
Doesn't containHalogen
Harmonized System (HS) code84733020
Row active time32 ns
Programming power voltage (VPP)2.5 V
Technical details
Sustainability certificatesRoHS
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Features
Internal memory32 GB
Internal memory typeDDR4
Memory clock speed3200 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency22
Memory voltage1.2 V
Memory layout (modules x size)1 x 32 GB