Products specifications
Attribute nameAttribute value
Width2.74"
Depth0.146"
Height1.18"
Internal memory8 GB
Internal memory typeDDR4
Memory clock speed2400 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency17
Memory voltage1.2 V
Sustainability certificatesRoHS
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Memory layout (modules x size)1 x 8 GB
Module configuration1024M x 64
JEDEC standardY
Lead platingGold
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns